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| GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes. Package Dimensions Description The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-4206 series provides a broad range of intensity selection. Suffix C-smoke color lens. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Absolute Maximum Ratings at Ta=25 Parameter Power Dissipation Peak forward Current (300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] s pulse) Maximum Rating 90 1 60 5 -40 -55 260 to +85 to +100 for 5 Seconds Unit mW A mA V Electrical Optical Characteristics at Ta=25 Parameter *Aperture Radiant Incidence Radiant Intensity Peak Emission Wavelength Spectral Line Half-Width Forward Voltage Reverse Current View Angle (See Fig.6) 2 VF IR 1/2 20 Symbol Ee Ie Peak Min. 0.3 2.25 Typ. 0.7 5.26 940 50 1.2 Max. Unit mW/cm 2 mW/sr nm nm Test Condition IF=20mA IF=20mA IF=20mA IF=20mA IF=20mA VR=5V 1.6 100 V A deg 10-10 Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm 2 in perpendicular to and centered on the mechanical axis of the lens and 26.8mm from lens. Typical Electrical/Optical Characteristic Curves (25 Ambient Temperature Unless Otherwise Noted) 10-11 INFRARED PRODUCTS |
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